The inelastic scattering of photons in visible and NIR and UV with change of frequency of scattered photon in the range of 100 - 5000 cm-1 is commonly referred as Raman spectroscopy, and it has been recognized as an effective tool for investigation of vibrational properties of semiconductor crystals since early 1970s.

FSM R&D and engineering teams have further extended this well proven technology to study of structures with complicated strain configurations involving strain varying as function of the distance from the surface of device, where both diagonal and off-diagonal strain components play important role - as it takes place in novel strain silicon epi-layers and devices, SiGe structures, localized oxidation of silicon (LOCOS) structures, and complicated micro-electro-mechanical (MEMs) devices. It can be also used as an effective tool for characterization of the device during final back grinding and packaging steps.

FSM tool offers very high spectral resolution, multiple excitation sources, phase modulated thermoelectrically cooled (TEC) Charge Coupled Device (CCD) detector, and full automation needed by modern semiconductor device manufacturing. High spectral resolution of FSM system allows not only detecting minute strains in the sample but also allows to study changes of Stokes line shapes and provides powerful tool for study of scattering originating from various layers of the material. Multiple excitation sources characterized by different wavelengths and different penetration depths allow user to access and identify strained layers buried at different depths inside semiconductor structure.

FSM Raman system is provided with standard Phase Modulated CCD allowing eliminating liquid nitrogen cooling requirement, and simplifying maintenance of the systems in industrial environment.

Finally FSM proprietary Stokes radiation polarization sensing technology allows identifying various components of the strain tensor for many commonly encountered structures.

FSM Raman system is provided with various microscope objectives and detector options. For more information on FSM Raman metrology, its advantages and limitations, and solutions specific to your applications please contact us directly. .
 

FSM127 - Imaging Low Coherence Interferometry

High-Resolution Nano - Topography for Flatness and Local Stress

Features

• Non-contact
• Imaging
• Nano-Topography and Local Stress measurement
• Die and Wafer Topography measurement capability
• Large working distance (10 mm or more)
• High lateral and height resolution
  

FSM 127 Principle of Operation

• A visible light imaging Michelson Low Coherence Interferometer
• Measures Flatness and Nano-Topography on Die-level
• Measurement area
• 40mm x 30 mm
• Uses interference patterns to determine the surface profile.

Localized Stress Measurement

Inputs to stress measurement w/ 127 system

• Local surface topography
• Local wafer thickness (FSM 413 Echoprobe)
• Local film thickness for most of conductive and insulating films (FSM Thin Film Probe or 4 point probe)

Output

• Local stress tensor components
• No third party input required

Configurations The following Configurations are available: ·

• FSM127 -150, -200, -300 (Semi-Automated System -motorized, x-y stage for mapping, manual sample load/unload, with MAX wafer diameter 150mm, 200mm, 300mm)
• FSM127-C2C -200, -300 (Fully Automated System with Robotic Wafer-Handler, 200mm or 300mm )  

FSM pioneered in the laser scanning technology for Film Stress and wafer bow measurement. Several hundred of these tools have been installed in almost every fab, and R&D facilities for Si, GaAS, InP or Flat panel facilities. Systems are available for room and high temperatures

FSM 128 series offer the simplest and most widely adopted technique in film stress and wafer bow measurement. It is fast, simple to operate, accurate, and is a non- contact method. The tool is capable of fast 2D and 3D mapping of Stress or wafer bow.

The FSM 128 is a semiautomated system, which measures samples up to 200 mm, while the FSM128L offers 300 mm capabilities The FSM 128G is targeted for the Flat Panel Industry, capable of measuring panels up to 550 x 650 mm.

Features
Great deal on performance for the best price in the manual load tool category.
Small foot print – desk top unit.
Easy & fast to learn & use.
Measures 40 data points/mm, > 10k points / 300 mm scan.
Provides 2D wafer stress map, wafer bow, etc.
> 500 units sold to many wafer fabs.
Can measure various wafer sizes 50-300 mm wafer diameters. 
 

FSM pioneered in the laser scanning technology for Film Stress and wafer bow measurement. Several hundred of these tools have been installed in almost every fab, and R&D facilities for Si, GaAS, InP or Flat panel facilities. Systems are available for room and high temperatures

FSM 128 series offer the simplest and most widely adopted technique in film stress and wafer bow measurement. It is fast, simple to operate, accurate, and is a non- contact method. The tool is capable of fast 2D and 3D mapping of Stress or wafer bow.

The FSM 128 is a semiautomated system, which measures samples up to 200 mm, while the FSM128L offers 300 mm capabilities The FSM 128G is targeted for the Flat Panel Industry, capable of measuring panels up to 550 x 650 mm



Features
Great deal on performance for the best price in the manual load tool category.
Small foot print – desk top unit.
Easy & fast to learn & use.
Measures 40 data points/mm, > 10k points / 300 mm scan.
Provides 2D wafer stress map, wafer bow, etc.
> 500 units sold to many wafer fabs.
Can measure various wafer sizes 50-300 mm wafer diameters.  

FSM 413 -300

The FSM 413 EchoprobeTM sensor uses patent pending infrared (IR) interferometric technique, which provides a direct and accurate map of thick to ultra-thin wafers measurement of substrate thickness, and thickness variation (TTV). Several materials transparent in IR beam, such as Si, GaAs, InP, SiC, Glass, Quartz and many polymers are readily measured with standard spatial resolution of 60 microns spot, (smaller spot sizes are available). Using a Single probe system, substrate thickness of conventional wafers with patterns, tapes, bumps or bonded wafers mounted on carriers can be determined with high precision and accuracy. When configured as a Dual probe system, the FSM413 also provides measurements of total thickness of the wafer, including substrate thickness and the patterned height thickness. Options are available to measure wafer warp, trench depth and via holes, including high aspect ratio trenches and vias in MEMs type applications. Various specialized MEMs applications including membrane metrology are also available.

4PP C2C Sheet Resistance Mapping System

FSM 4PP-C2C is a production-worthy sheet resistance metrology tool used in the metals, CMP, and diffusion modules of semiconductor wafer fab. It provides stable and accurate sheet resistance for process characterization, process variation production monitoring tool qualification. With this advanced automation and edge correction capability this system enable high throughput sheet resistance mapping of both 200mm and 300mm wafer up to 1mm on the edge. Combined with flexible user interface, this system provides lower cost of the ownership.

 System specifications

• Sheet resistance range: 1m ohm/sq ~ 1 M ohm/sq
• Accuracy: <0.5 % of NIST standard
• Repeatability: < 0.2 %
• Long term repeatability: < 0.3%
• Edge exclusion: 1mm
• Rs contour or color map
• Standard single probe
• Standard single hand robot
• Full 300mm Fab automation capabilities
• Non-contact RsL probe for junction wafer as an option  

FSM introduces the EOT

FSM introduces the EOT, a fully automated product wafer monitor for oxide quality and gate oxide stack evaluation. This tool has the ability to simultaneously measure CV characteristics such as effective oxide thickness (EOT), Vfb, Qeff, Dit and a full range of IV information. FSM has a complete line of Fully Automated or Bench top metrology tools available. 

FSM pioneered in the laser scanning technology for Film Stress and wafer bow measurement. Several hundred of these tools have been installed in almost every fab, and R&D facilities for Si, GaAS, InP or Flat panel facilities. Systems are available for room and high temperatures.

High temperature Stress measurements for characterization of thermal properties of new films and process development is available with the following products: FSM 500TC - Stress measurements from ambient to 500 degrees C, for samples up to 200 mm FSM 900LT - Stress Measurements from -90 deg C to 550 deg C FSM 900TC-vac - Stress Measurements from Ambient to 900 deg C, with options up to 1000 degrees C, for both 200 and 300 mm wafers. Operates in a controlled, oxygen free environment, under vacuum or inert gas.

Features

Great performance for a desktop film stress hysteresis unit.
Can measure film stress up to 500 C.
Can measure various wafer sizes.
Measures 40 data points per mm, 8k points / 200 mm scan. 
 

Integrated Metrology Annealing Chamber

Rapid Thermal Mechanical Evaluation of
low k,
Copper,
Barrier,
High k,
novel materials.


FSM 900TC-vac series Integrated Metrology System for simultaneous
1) Film Stress Hysteresis Studies
2) Thermal Stability Evaluation
3) Thermal Desorption Spectra
4) Shrinkage Studies
5) Reflectivity Studies
6) Coefficient of Thermal Expansion Measurements



Features

Unique capability to measure film stress to 900 degree C, options to 1100 C.
Unique capability to measure out-gassing with a RGA unit during a heating cycle.
Capable to measure wafers from 50 mm to 300 mm in diameters.
Capable to pump down to 1E-6 torr to prevent film oxidation during heating.

Fast and Simultaneous multiple metrology on same wafer . Avoids tool to tool and sample variation problems associated with multiple tool sets.
 

Integrated Metrology Annealing Chamber for Cu material characterization

Why Dedicated Cu – Metrology


• Required to avoid Cu contamination
• Cu is very oxidation sensitive: requires processing at < 10ppm oxygen
• Special Thermal Budget requirements up to 450°C
  
  Application concerns
• Industrial issue: Cu stress can cause reliability issues for wires or interconnects
• Stress in Cu can accelerate the electro-migration phenomenon
• After Cu film deposition: Wafers will face additional annealing or heating process steps of up to 450°C
  
  Cu related Questions
  
  Thermal Properties
• Can the material withstand multiple heat cycles, up to 4500 C
• Stress Hysteresis effects
• Does it outgas
       • Material Shrinkage
       • Coefficient of Thermal Expansion
  
  Mechanical Properties
• Adhesive and Cohesive Strength
• Hardness, Modulus and Porosity
  
  Specifications:
• Characterization of Thermal Properties
       - Combination of Metrology with High Temperature Annealing Chamber
• Determine Residual Stress
• Study Stress Hysteresis over a Thermal Cycle
• Determine thermal stability of material
• Determine Coeff. of Thermal Expansion CTE
• Study of desorption and outgassing properties
• Vacuum or purging required
  

Optional Multiple Probes available for

• Laser Scanning for Film Stress Hysteresis Studies
• Thermal Stability Studies
• Thermal Desorption Spectroscopy
• Shrinkage Studies
• Reflectivity Studies
• Resistivity Studies
  

More Features

• Sealed vacuum chamber - oxidation free environment for Cu - material characterization
• Stress & TDS ( outgassing ) combination are very powerful process diagnostics tools for contamination and delamination problems  

• Low k, copper, barrier film adhesion strength studies
• Stress induced fractures or failures
  
  Testing conditions:
  (a)Room Temp or Variable temperature option
  (b)Ambient or in liquid
  
  Cohesive Strength Testing and crack velocity Options
• Features Multiple Chambers for Rapid Characterization
• Integrated Sample Preparation and training package for rapid lab setup
  

Features
Provides sample preparation kits and methods in sample preparation work.

• Provides up to 6 chambers per tool.
• Easy to learn and operate.