 MicroChem Corp. (MCC) develops, manufactures, sells, and supports specialty niche chemicals for semiconductor/IC, thin film head, and other electronic manufacturing applications. The primary focus is photosensitive materials, such as photoresists, and other ancillary products. MCC technology consists of proprietary and non-proprietary products requiring state-of-the-art technical expertise, high reproducibility, high product cleanliness, and specialty microfiltration. MicroChem manufactures all of their products in their newly re-fitted 25,000 square foot facility in Newton, Massachusetts. All the products are made in environmentally controlled areas and packaged in Class 100 Cleanroom environments. Microchem resist products are available in 500ml, 1 Liter, 4 Liter Amber glass bottles, in addition we can package into 10 and 20 Liter Nowpaks. The ancillary products are available in 4 Liter Polyethylene bottles, Nowpaks and 55 Gallon drums. | | |
Product index: Application Note (pdf) SU-8 2000 & 3000 Series Resists The SU-8 product line consists of chemically amplified; epoxy based negative resists with high functionality, high optical transparency and are sensitive to near UV radiation. Cured films or topography are highly resistant to solvents, acids and bases and have excellent thermal stability, making it well suited for permanent use applications. SU-8 2000 Permanent Epoxy Resists SU-8 2000 chemically amplified, i-line resists are well-suited for the fabrication of permanent device structures. These negative tone, epoxy based resists exhibit excellent chemical resistance and low Young's Modulus which makes them ideal for fabricating micro/nano structures such as cantilevers, membranes, and microchannels. |
Material uses: - Fabrication of PDMS molds
- Structural components such as micro arrays, fluidic channels, display pixel walls and dielectric layers
- Dry etch masks
- Rapid prototyping
| Material attributes: - Spin coat films from 75µm
- High thermal and chemical resistance
- Optically transparent
- Compatible with i-line imaging equipment
|
 |  |
| 25 µm wide, 125 µm high Source: MicroChem | 10µm features, 50µm SU-8 2000 coating Source: Micro Resist Technology | Cantilever
 | Microfluidic Actuator | Genoletet, al., IBM-Zurich, Rev. Sci. Instrum., 70, 2398 (1999)
| N Chronis, LP Lee, UC Berkeley, μTAS 2002, 754 (20 |
SU-8 3000 | SU-8 3000 has been formulated for improved adhesion and reduced coating stress. It is being used where high bond strength and improved flexibility for microstructure fabrication is desired. As a result, adhesion to the substrate is greatly improved. |
Material uses: - Waveguides
- Microfluidics
- Stamps
| Material attributes: - Improved adhesion
- Reduced coating stress
- Vertical sidewalls
- Greater than 100 μm film thickness in a single coat
- Excellent dry etch resistance
|

10µm features in 50µm SU-8 3000 (contact expose) Source: MicroChem | |
KMPR 1000 Photoresist KMPR® 1000 i-line photoresist is a high contrast, epoxy based photoresist that can be developed in a conventional aqueous alkaline developer (TMAH) and readily stripped from the substrate. KMPR is designed to coat 4-120 µm in a single step using four standard viscosities. KMPR can be easily removed after completion of electroforming using commercially available chemical removers. Lithography can be used to form KMPR molds that have the required dimensional accuracy and sidewall verticality for micro electroforming. Deep reactive ion etching (DRIE) compatible with the CMOS process, KMPR will survive dry etch for the extended periods of time necessary to perform >20 µm deep etching with HAR. Material uses:- MEMS
- DRIE
- Electroplating
- Permanent Structures
| Material attributes:- High aspect ratio with vertical sidewalls
- High chemical and plasma resistance
- Greater than 100 µm film thickness in a single coat
- Excellent adhesion to metals
- Wet strips in conventional strippers
- Excellent dry etch resistance
|
 |  |  | | Plating | Permanent | Deep Etch |  Plating (100 µM tall Ni posts, KMPR removed) |  Electroformed Ni gear after stripping KMPR Source: Univ. of Birmingham | |
PMGI & LOR Under Layer Resists PMGI and LOR resists enable high yield, metal lift-off processing in a variety of applications from data storage and wireless ICs, to MEMS. Used beneath photoresists in a bi-layer stack, PMGI and LOR extend the limits of lift-off processing beyond where single layer resist strategies can reach. This includes very high resolution metallization (4µm) metallization. These unique materials are available in a variety of formularies to meet virtually any customer need. Material uses: | Material attributes:Won’t intermix when over-coated with imaging resists Single step development of bi-layer stack in TMAH, or KOH developers High thermal stability: TG ~190 C Removes quickly and cleanly in conventional resist strippers Enables sub .250µm micron bi-layer resist imaging Enables high yield, very thick (>3µm) metal lift-off processing
|
|
Bi-Layer Lift-Off Process 
Step 1. LOR or PMGI is coated 
Step 2. The imaging resist is coated onto the LOR or PMGI layer. 
Step 3. The imaging resist is exposed.

Step 4. The wafer is developed. 
Step 5. Metal Deposition 
Step 6. Lift-Off! | Lift-Off: An enabling, additive lithographic process. 
1. Bi-layer resist pattern
2. Metal Deposition 
3. Clean solvent lift-off |
GaAs Modulator with Al airbridge Source: Nortel
PMGI used as a sacrificial layer on which the airbridge was built. The PMGI layer was subsequently removed with conventional resist removal processing. |
PMMA Resist | PMMA positive resists are based on special grades of polymethyl methacrylate designed to provide high contrast, high resolution for e-beam, deep UV (220-250nm) and X-ray lithographic processes. In addition, PMMA is often used as a protective layer in III-V device wafer thinning applications. Standard products include 495,000 and 950,000 molecular weights (MW) in a wide range of film thicknesses formulated in chlorobenzene, or the safer solvent anisole. In addition 50,000, 100,000, 200,000 and 2.2 million MW are available upon request. Copolymer resists are based on a mixture of PMMA and ~8.5% methacrylic acid. Copolymer MMA (8.5) MAA is commonly used in combination with PMMA in bi-layer lift-off resist processes where independent control of CD size and shape of each resist layer is required. Standard copolymer resists are formulated in the safer solvent ethyl lactate and are available in a wide range of film thicknesses. In addition, MMA (17.5) MAA copolymer resists are available upon request. |
T-gate resulting from PMMA/Copolymer bilayer resist stack.
Product Attributes l Sub 0.1µm imaging l E-beam, Deep UV and X-ray imagable l Broad range of molecular weights & dilutions l Compatible with multi-layer processes l Excellent adhesion to most substrates Applications for PMMA & copolymer resists l Multi-layer T-gate processes l Other direct write e-beam processes l Protective layer for III-V device wafer thinning PMMA & Copolymer Resists: PMMA Resist Data Sheet
Ancillaries MicroChem offers a broad line of ancillary products for resist thinning, edge bead removal, development, rinse and removal of photoresists. These products work effectively with our PMGI, LOR, PMMA & copolymer and SU-8 resists as well as with many other commercially available photoresist products. Competitively priced, these ancillary products and are available in a wide range of package sizes. |
Adhesion Promoter/Release Layer: Photoresist thinners - SU-8 2000 thinner (to dilute SU-8 2000 resists)
- T thinner (to dilute PMGI SF resists)
- G thinner (to dilute PMGI and LOR SFG resists)
- A thinner (to dilute PMMA A resists)
- C thinner (to dilute PMMA C resists)
- EL thinner (to dilute copolymer resists)
Edge bead remover Developers - PMGI 101 developer (to selectively develop PMGI resists)
- SU-8 developer (to develop SU-8 & SU-8 2000 resists)
- MIBK:IPA 1:1 (pdf) (to develop PMMA & copolymer resists)
- MIBK:IPA 1:2 (pdf) (to develop PMMA & copolymer resists)
Rinse Removal MicroSprayTM | MicroSpray™ is based on long proven, mature, novolak technology. It is ideally suited for developmental applications including perforated, 3-dimensional and other substrates that have severe topography, deep V grooves, back side wafer protection or other difficult MEMS features. MicroSpray is also available with SU-8. Gwen Donahue, MEMS Engineer with MicroCHIPS, Inc. says, "I was very pleased with the results of MicroSpray. The coverage of the 100µm sidewalls is exactly what I wanted to see on these wafers and I was unable to get this result using spin on resist." |
Material uses:- Conformal coatings
- Backside coatings
- Protective coatings
- MEMS devices
- Decorative etching
- Prototyping
| Material attributes:- No coating equipment required
- Minimal waste
- Coats over non-planar surfaces
- Coats irregularly shaped substrates
- Covers the sidewalls and edges of trenches
- Produces uniform coatings on perforated substrates
|
 |  | | Patterned through wafer vias | Micro-machined cavities |
5 µm coating of MicroSpray™ in a 25 µm deep silicon cavity |
|
APPLICATIONS Applications > MEMSMicrofluidicsMicrofluidics is the science and technology of manipulating and analyzing fluid flow in sub-millimeter dimensions. It is the key enabling technology for many emerging applications and disciplines, especially in the fields of chemistry, biology and medicine. In engineering and the physical sciences microfluidic systems are employed in applications such as control systems, heat management, and energy generation. Examples include:- Biosensor devices for molecular diagnostics
- Polymerase chain reaction chips
- High-throughput screening
- Controlled drug delivery systems
- Drug discovery methods
- Forensic analysis instruments
Topics:- Monolithic integration of unit operations
- Sample preparation, metering, mixing/separation
- Precise fabrication of complex microfluidic structures with a rapid, cost-effective fabrication process.
- Fabrication process compatible with the integration of microelectronics needed for actuation and/or detection
SU-8 Benefits/Attributes- High aspect ratio imaging
- 0.5 to >200um in a single coat
- Superb chemical and temperature resistance
- Optical transparency
- Photolithography is more cost effective compared to Si and glass micromachining
| Process/SEMs courtesy of H. Sato, et al., Waseda Univ. | Top Layer Construction Combined Layer Construction | 
|
|

 | Journal of Micromech. Microeng. 21, 2011 M. Suter et al. SEM image of a micro cantilever made of a magnetic photo curable polymer SU-8 composite with 5 vol.% Fe3O4 particle content. The cantilever has a length of 80 μm, a thickness of 1.8 μm and a width of 14 μm. |
|
Applications > MEMSC-MEMS & C-NEMS: 3D Carbon MicrofabricationC-MEMS—in which patterned photoresist is pyrolyzed in an inert environment at high temperature—constitutes a powerful approach to building 3D carbon microelectrode arrays for 3D micro battery applications. High aspect ratio carbon posts are achieved by pyrolyzing SU-8 negative photoresist in a simple one step process. C-MEMS technology is useful for 3D microarray due to C having attractive properties. These include mechanical durability, electrical conductivity, and chemical stability. High aspect ratio with low cost is obtained by using SU-8 with conventional photolithography followed by pyrolysis. |
SU-8: Benefits/Attributes- High aspect ratio
- Near vertical sidewalls
- >200 µm in a single spin coat
- No popping or voids created in resist structures after exposure
- Conductivity after pyrolysis of 1000°C for 1 hour, the SU-8 is similar to glassy carbon
Pyrolysis Chamber
Pyrolysis of SU-8Applications > MEMSLIGALIGA is a German acronym for Lithographie, Galvanoformung, Abformung (Lithography, Electroplating, and Moulding) that describes a fabrication technology used to create high-aspect-ratio (HAR) microstructures. UV LIGA utilizes an inexpensive ultraviolet light source, like a Hg lamp, to expose a polymer photoresist, typically SU-8 or PMMA. Because heating and transmittance are not an issue in optical masks, a simple Cr mask can be substituted for the technically sophisticated X-ray mask. These reductions in complexity make UV LIGA much less expensive and more accessible than its X-ray counterpart. However, UV LIGA is not as effective at producing precision molds and is thus used when cost must be kept low and very high aspect ratios are not required.
SU-8: Benefits/Attributes- High aspect ratio imaging
- Excellent chemical & temperature resistance
- Coatings to hundreds of microns
 |  | SU-8 Microgear B. Loechel, et. al., Abstracts HARMST 2003, 55 (2003)
| 50µm x 2.5mm SU-8 LIGA gear mold. Courtesy of ZG Ling, CAMD, Louisiana State Univ. (2003)
|
 | | Source: Univ. of Alabama, Huntsville |
|
| The LIGA-fabrication process is composed of (a) exposure (b) development (c) electroforming (d) stripping and (e) replication |
|
Applications > MEMSSacrificial Via Protection for TSV and MEMS Applications The rapid expansion of 3D-WLP (wafer-level-packaging) and MEMS is accelerating the growth of high topography features and their integration with 3D-TSV technologies. A large number of technologies have been demonstrated with the common goal to create more functionality while occupying less real-estate. One of the preferred processes for creating deep TSV’s (through-silicon-via’s) is the Via’s first approach. This allows the TSV’s to be etched before any expensive and critical CMOS processing. This method can impact later critical process stages. As a result the use of sacrificial thick planarizing and protection materials can be used to return a flat starting substrate that’s pre-etched with TSV’s.
Benefits/Attributes- Materials specially designed as a spin-on polymer for sacrificial TSV filling and planarization
- Silicon Via’s protected against subsequent processes
- Easily removed using industry standard wet and dry chemistries
- Single coat with void free filling
- Thermally stable
- Options for etch back process, wet, dry or CMP.
|

 | | Process Flow Strip Rate
|
| |
| |  | Source:: MCC / University of Durham Technical Poster
|
|
|
Applications > MEMSMicrowell ArraysMicrowell arrays* are widely used for microfluidic diagnostics. SU-8 is being used to lithographically fabricate addressable low cost high density microwell arrays for disposable biochips. Rapid diagnostic tests can be done with luminescent based assays using dyed SU-8 fiber optic faceplates. Reducing optical cross talk improves detection sensitivity. Applications include bio-mems for genomics, proteomics, and other bio determinations.
Hybrid SU-8 on glass biochip- Precise wells – diameter, depth, pitch
- Highly addressable
- Spectrally specific absorbing chemistry
- Optical cross-talk eliminated with dye
- Low cost fabrication
- Wide variety of analysis, sensing
- Sensing at nano-levels for life science and homeland security
SU-8 Benefits/Attributes- Excellent adhesion to glass
- Many shapes, channels possible
- High aspect ratio
- Chemically resistant to diagnostic chemistries
- Coating method can greatly reduce material cost
- Photolithography compatible with widely used IC processes and equipment
 | Bottom of wells/glass surface SU-8 Magenta Resist is shown |
* This application has been jointly developed by MicroChem and Incom. Incom is a global leader in fused fiber optic technology. The fiber optic face plate used in this application was developed by and is manufactured by Incom.
| Microwell Arrays (Increasing Magnification)
 | SEMs Source: Incom |
|
Applications > Specialty DisplaysPermanent Epoxy Photoresist for Pixel Grids in ElectrowettingIn electrowetting liquid surface tensions are modified by applying a field potential. With no voltage applied colored oil lies flat between water and the electrode within a defined well. When a voltage is applied between the electrode and water, the tension changes and the water then forces the oil aside. In electrowetting displays (EWD) the use of an active matrix TFT back-plane can control each pixel allowing for high speed and video content. Because electrowetting is low power this is an attractive technology for many applications. Electrowetting displays can also be used in both reflective and transmissive modes and offer higher brightness compared with other reflective technologies. Electrowetting is also used for a wide range of microfluidic lab-on-chip applications.
SU-8: Benefits/Attributes- Highly crosslinked system with high structural strength
- High contrast with vertical sidewalls
- High aspect ratio imaging
- High fill factor pixel walls
- Ability to adhere to fluoropolymers
- Fast photospeeds for high volume manufacture
| | Dielectric Constant | 4.1 @ 1GHz | | Volume Resistance | 2.8x1016Ω/cm | | Surface Resistance | 1.8x1917Ω/cm |
| | |
|
 | |  | SU-8 Pixel Walls with oil shown in the on, mid and off state | | Transmissive display using an SU-8 Grid |
| Courtesy of University of Cincinnati, Plastics Electronics 2010 |
| |
Permanent Epoxy Photoresist for Dielectrics in Organic TFT Back-Planes Organic field-effect transistor (OFET) is a transistor that uses an organic semiconductor in its channel. These devices are being developed with low-cost, low temperature and large-area electronics in mind. Organic electronics can also be manufactured on polymeric substrates such as PET or PEN. This allows for large-scale roll-to-roll manufacture that could be used to produce large area, low-cost active matrix TFT's for display applications. Both top and bottom-gate configurations can use organic polymers such as SU-8 for the interlayer dielectric separating the active TFT from the pixel electrode.
SU-8: Benefits/Attributes- Highly crosslinked system with high structural strength
- Highly transparent in the visible range
- Options for low temperature bakes
- Photo imageable
- Fast photospeeds for high volume manufacture
- Low dielectric constants with high breakdown voltages
SU-8 2000 Material Properties | Dielectric Constant | 3.0 @ 1kHz to 10kHz, 4.1 @ 1GHz | Volume Resistance | 2.8x1016 Ω/cm | Surface Resistance | 1.8x1917Ω | Breakdown Voltage | 112 V/µm | Dissipation Factor | 0.015 @ 1GHz |
| | |
|
| |
| Applications > III-VsT-Gate FabricationT-shaped gates improve high electron mobility transistors (HEMTs) performance. T-gate structures are usually fabricated in high electron mobility heterostructures like InGaAs. Sub 50nm gate length result in reduced capacitance, high electron mobility, and ultra high RF characteristics. Tri-layer resist structures with a PMGI layer (aqueous developer) in between two PMMA layers (solvent developer) are being used for precise control of the T-gate shape to optimize device electrical properties.
PMGI/LOR: Benefits/Attributes- Sacrificial layer to assist in fabrication of higher gate stem heights
- Excellent adhesion to III-V substrates
- Suitable for multi-layer processing
- Suitable for use as a protective separation layer between incompatible layers
- Allows gate head and gate foot to be written separately for improved resolution
- Can be used in a resist stack with low intermixing
PMMA: Benefits/Attributes- Positive tone; E-beam imageable
- Wide range of film thicknesses
- Excellent adhesion to most substrates
|
Applications > III-VsAirbridgesAirbridges use air as the dielectric between two conductors to extend the operating frequency. Fabricating microelectromechanical systems (MEMS) where airbridges or cantilevers are required has been done for many years using polymethylglutarimide (PMGI) as a sacrificial release layer.
PMGI: Benefits/Attributes- Spin-coatable from 10nm to 6µm in a single coat
- No intermixing with imaging resist
- High thermal stability <300 C (Tg~189C)
- Strippable in NMP, DMSO and aqueous-based developers
- Resistant to conventional semiconductor solvents
- Excellent adhesion to various substrates
Process Flow
|  | 10 GHz GaAs Modulator with Airbridge. Image courtesy of Nortel. |
 | Plate overlay layer • 3μm - 5μm plated gold • Strengthen bridge landings • Compensate stress gradients
|  |
|
|  | Remove PMGI sacrifical layer • Wet release process • All organic solvents • End with acetone • Boil off acetone in vacuum
|  |
|
|
Wafer ThinningThe wafer’s front surface containing the micro devices must be protected during the harsh wafer thinning/grinding and polishing of the back surface. PMMA coatings are useful as a protective bond and release layer for the front surface in wafer thinning. PMMA also affords protection during the subsequent dicing and handling steps. Its thermal and mechanical stability as well as the ease of application, i.e. spin coating, and later removal in solvent make PMMA a good candidate for this application.
The protective PMMA layer does not contaminate the active devices during mechanical processing nor leave residues or organic contamination prior to a final passivation.
PMMA: Benefits/Attributes- Clean de-bonding
- Ease and efficiency of removal vs. wax
- Dual functionality: bonding and release layer
- Capable of withstanding various back-side processes:
- Lithography - Etch - CMP - Metal Deposition:(Sputtering or Plating)
|
 Process Flow:
1. Coat 495 A15 onto the front-side of the wafer to a thickness of approximately 3µm and soft bake. 2. Coat wax onto the Solid Sapphire Carrier. 3. Affix the perforated Sapphire Carrier onto the softened wax layer. 4. Apply additional wax onto the perforated Sapphire Carrier and allow to melt. 5. Mount the PMMA-coated wafer onto the softened wax, PMMA-coated side down. 6. Back lap and polish the wafer. 7. Perform necessary back-side processing. 8. Dismount the wafer from the wax layer using heat and sliding it off the carriers. 9. Strip the PMMA in Remover PG at elevated temperatures. (25°–80° C)
|
PassivationPassivation is the process of depositing a thin inert film onto the surface of a micro device in order to greatly improve its electrical characteristics. SU-8 passivation enhances device performance of small area diodes which are susceptible to surface area effects. Surface leakage currents due to abrupt termination of crystal structure, dangling bonds, inversion layer, and interfacial traps at the device/air interface can be overcome by using SU-8 passivation. HgCdTe and newer type-II InAs/GaSb superlattice (T2SL) IR imagers benefit from SU-8 passivation. GaN Light Emitting Diodes (LEDs) performance is also greatly enhanced.
SU-8: Benefits/Attributes- Easily integrates into fabrication process
- Improves device performance by reducing dark current density
- High aspect ratio imaging
- 0.5 to >200µm in a single coat
- Superb chemical and temperature resistance
- Optical transparency
- Hydrophobic surface after cross-linking
|
 | Passivation layer for diodes. |

 | Encapsulation with imaged vias. | |
MicrolensesMicrolens arrays (MLAs) are being used more and more in optical and lighting systems in applications such as fiber optics, image systems and illumination. Various fabrication methods for MLAs have been described. These include the reflow process, molds, laser-aided fabrication, lithography with a gray-scale mask, etching, and assembly by surface properties. Among these processes, molding has more advantages such as fast, high precision and mass product. MCC’s PMMA, SU-8, and PMGI have all been used for microlens fabrication Any material in liquid state tends to exist in its lowest surface free energy, resulting in the least surface area, and spherical shape. The polymer particles on the smooth surface of a substrate will shrink into a hemispherical lens due to the surface tension when heated above their softening temperature. The key is to make sure of regular arrangement of lenses in a two dimensional plane. SU-8 can also be used as the micro-mold or stamp to form PDMS or PMMA microlenses.
PMMA, SU-8, PMGI Lenses: Benefits/Attributes- Excellent adhesion
- Optical transparency
- Spin-coatable
|
 | Fabrication of SU-8 Microlens array using a stamping method. Source: S. Kuo & C. Lin, J. Micromech. Microeng. 18 (2008)
|
 | VCSEL with integrated PMGI Microlens to shape the laser output beam. Source: Optoelectronics Dept., Univ. of Ulm
|
| Basic steps of PMGI Microlens fabrication using an imaging resist and thermal reflow process based on surface tension. 
Source: University of Washington |
WaveguidesWaveguides used at optical frequencies are typically a dielectric structure, e.g. SU-8 or PMMA, with high transmission and high index of refraction surrounded by a material with lower %T. The structure guides optical waves by total internal reflection. Integrated optics/photonics is becoming more pervasive as devices communicate with one another. Low optical loss is an important consideration for any waveguide fabrication technique. Optical losses in waveguides arise due to the material absorption and scattering losses from the sidewalls. The former is intrinsic to a particular material while the latter is attributed to the lithographic process. The refractive indices of the waveguide core, cladding and substrate are essential input parameters necessary to predict system behavior. Above a wavelength of 400 nm, the transmission of SU-8 is greater than 95%. SU-8 is optically transparent at 632.8 nm as well as at the telecommunications wavelengths of 1330 nm and 1550 nm. SU-8 is therefore a suitable material for optical waveguides. A sensor/detector waveguide stripe interferometer can be formed from SU-8 with a reactive clad coating that changes optical properties upon interaction with the substance to be detected.
PMMA and SU-8: Benefits/Attributes- Excellent adhesion
- Optical transparency
- Excellent chemical resistance
- Spin coatable
- Material compatibility
 | Sensor structure – waveguide Mach-Zehnder interferometer. Made of SU-8 photolithography deposited stripe waveguides. Source: M. Bednorz, Silesian U Molecular and Quantum Acoustics vol. 27, (2006)
|
|
 | Refractive index of SU-8 film as a function of wavelength. Source: U. of Twente, NL |
 | PMMA NIR-range Abs.; the two telecommunication λs are indicated. Source: Karlsruhe Institute for Mat. Res.
|
| | |  | Transmission spectra versus λ of cross-linked SU-8 resist. Only the data from the visible wavelengths (400 nm to 800 nm) and the communications λs (1330 nm & 1550 nm) are shown. Source: Investigation of SU-8 Waveguides, Cpt. 5
|
|
|
Applications > Advanced PackagingHigh Aspect Ratio (HAR) Micro-plated Structure Using KMPRElectroplating using high aspect ratio (HAR) photo lithography-defined microstructures is an important tool for the fabrication of micro metal structures. Electroplating molds with HAR features requires that the photoresist will survive harsh Ni, Cu, and Au electroplating bath environments and still be removed (plasma: O2/CF4) after the metal has been deposited. KMPR, a thick (4 - 120µm) negative photo epoxy that uses standard aqueous alkaline developers, meets these requirements.
KMPR: Benefits/Attributes- High aspect ratio imaging with vertical sidewalls
- Up to 100+ µm in a single spin coat
- Compatible with standard aqueous developers
- No cracking
- Strippable with standard wet or dry chemistry
- Excellent metal adhesion
- Excellent plating bath stability
Process Flow
|
 | 50 um tall Cu post grid array, KMPR removed Source: MicroChem Lab |
 | 100 um tall Ni posts, KMPR removed Source: MicroChem Lab |
|
|
|